2008/03/06 by Hisao Miyazaki, Shunsuke Odaka, Takashi Sato +6 · 2 citations
Materials Science · Physics and Astronomy · #Graphene research and applications #Graphite, nuclear technology, radiation studies #Thermal properties of materials #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1143/apex.1.034007
published as Applied Physics Express 1 (2008) 034007 · 5 pages, 4 figures. To be published in Applied Physics Express
arxiv created 2008/03/06 · openalex publication_date 2008/03/14 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/30
Electric conduction in thin graphite film was tuned by two gate electrodes to clarify how the gate electric field induces electric carriers in thin graphite. The graphite was sandwiched between two gate electrodes arranged in a top and bottom gate configuration. A scan of the top gate voltage generates a resistance peak in ambiploar response. The ambipolar peak is shifted by the bottom gate voltage, where the shift rate depends on the graphite thickness. The thickness-dependent peak shift was clarified in terms of the inter-layer screening length to the electric field in the double-gated graphite film. The screening length of 1.2 nm was experimentally obtained.