2007/07/31 by J. Johansen, Jeppe Johansen, Søren Stobbe +12 · 2 citations
Materials Science · Physics and Astronomy · #Quantum Dots Synthesis And Properties #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat.other
paper · pdf · doi:10.1103/physrevb.77.073303
published as Phys. Rev. B, vol 77, page 073303, 2008 · 5 pages, 3 figures
arxiv created 2007/12/10 · openalex publication_date 2008/02/12 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
The radiative and nonradiative decay rates of InAs quantum dots are measured by controlling the local density of optical states near an interface. From time-resolved measurements, we extract the oscillator strength and the quantum efficiency and their dependence on emission energy. From our results and a theoretical model, we determine the striking dependence of the overlap of the electron and hole wavefunctions on the quantum dot size. We conclude that the optical quality is best for large quantum dots, which is important in order to optimally tailor quantum dot emitters for, e.g., quantum electrodynamics experiments.