2012/02/27 by Nektarios Koukourakis, C. Bückers, Dominic A. Funke +10 · 1 citation
Physics and Astronomy · Engineering · #Semiconductor Quantum Structures and Devices #Photonic and Optical Devices #Nanowire Synthesis and Applications
paper · doi:10.1063/1.3690886
openalex publication_date 2012/02/27 · openalex created_date 2025/10/10 · openalex updated_date 2026/06/11
We analyze the modal gain of Ga(NAsP) multi quantum-well heterostructures pseudomorphically grown on (001) silicon substrate by metal-organic vapor-phase epitaxy. Using the variable stripe length method, we obtain high modal gain values up to 78 cm−1 at room temperature that are comparable to the values of common high quality III-V laser material. We find good agreement between experimental results and theoretically calculated gain spectra obtained using a microscopic model. The results underline the high potential of Ga(NAsP) as an active material for directly electrically pumped lasers on silicon substrate.