2007/10/31 by S. V. Morozov, K. S. Novoselov, M. I. Katsnelson +4 · 1 citation
Physics and Astronomy · #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevlett.100.016602
published as Phys. Rev. Lett. 100, 016602 (2008)
arxiv created 2008/01/07 · arxiv updated 2009/12/01
We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our measurements have shown that mobilities significantly higher than 200,000 cm2/Vs are achievable, if extrinsic disorder is eliminated. A sharp (threshold-like) increase in resistivity observed above approximately 200K is unexpected but can qualitatively be understood within a model of a rippled graphene sheet in which scattering occurs on intra-ripple flexural phonons.