2007/08/31 by P. Zhang, Pei Zhang, M. W. Wu · 2 citations
Engineering · Physics and Astronomy · #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #Semiconductor materials and devices #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevb.76.193312
published as Phys. Rev. B 76, 193312 (2007). · 3 pages, 2 figures, PRB in press
arxiv created 2007/11/09 · openalex publication_date 2007/11/27 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
Based on fully microscopic kinetic spin Bloch equation approach, we show the non-Markovian effect in spin dephasing of heavy holes in p-type GaAs quantum wells. The non-Markovian effect manifests itself in spin dephasing when the mean spin precession time is shorter than the momentum relaxation time. The spin dephasing becomes slower when the non-Markovian effect is important. Moreover, quantum spin beats due to the memory effect of the non-Markovian hole--longitudinal-optical phonon scattering are predicted.