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Gaped graphene bilayer: disorder and magnetic field effects

2007/04/12 by Eduardo V. Castro, N. M. R. Peres, J. M. B. Lopes dos Santos · 3 citations
Chemistry · Materials Science · Physics and Astronomy · #Advanced Physical and Chemical Molecular Interactions #Chemical and Physical Properties of Materials #Graphene research and applications #cond-mat.mes-hall #cond-mat.mtrl-sci

paper · pdf · doi:10.1002/pssb.200674604

published as phys. stat. sol. (b) 244, 2311 (2007) · 5 pages, 4 figures

openalex publication_date 2007/04/12 · arxiv created 2007/11/21 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28

Abstract

Abstract Double layer graphene is a gapless semiconductor which develops a finite gap when the layers are placed at different electrostatic potentials. We study, within the tight‐biding approximation, the electronic properties of the gaped graphene bilayer in the presence of disorder and perpendicular magnetic field. We show that the gap is rather stable in the presence of diagonal disorder. We compute the cyclotron effective mass in the semi‐classical approximation, valid at low magnetic fields. Landau level formation is clearly seen in zigzag and armchair ribbons of the gaped bilayer at intermediate magnetic fields. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Citations

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