2007/07/24 by A. N. Chantis, Athanasios N. Chantis, Kirill D. Belashchenko +7 · 2 citations
Physics and Astronomy · #Magnetic properties of thin films #Physics of Superconductivity and Magnetism #Quantum and electron transport phenomena #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevlett.99.196603
published as Phys. Rev. Lett. 99, 196603 (2007)
arxiv created 2007/07/24 · openalex publication_date 2007/11/09 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
A minority-spin resonant state at the Fe/GaAs(001) interface is predicted to reverse the spin polarization with the voltage bias of electrons transmitted across this interface. Using a Green's function approach within the local spin-density approximation, we calculate the spin-dependent current in a Fe/GaAs/Cu tunnel junction as a function of the applied bias voltage. We find a change in sign of the spin polarization of tunneling electrons with bias voltage due to the interface minority-spin resonance. This result explains recent experimental data on spin injection in Fe/GaAs contacts and on tunneling magnetoresistance in Fe/GaAs/Fe magnetic tunnel junctions.