2007/09/10 by E. W. Schmidt, D. Bernhardt, A. Mueller +13
Physics and Astronomy · #Advanced Chemical Physics Studies #Atomic and Molecular Physics #X-ray Spectroscopy and Fluorescence Analysis #astro-ph #physics.atom-ph
paper · pdf · doi:10.1103/physreva.76.032717
published as E. W. Schmidt et al., Phys. Rev. A 76, 032717 (2007) · 13 pages, 9 figures, 3 tables. Accepted for publication in Physical Review A
arxiv created 2007/09/10 · openalex publication_date 2007/09/28 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/01
The electron-ion recombination rate coefficient for Si\phantom\rule0.3em0exIV forming Si\phantom\rule0.3em0exIII was measured at the heavy-ion storage-ring TSR. The experimental electron-ion collision energy range of 0--186\phantom\rule0.3em0exeV encompassed the 2p6nln^\ensuremath'l^\ensuremath' dielectronic recombination (DR) resonances associated with 3s\ensuremath→nl core excitations, 2s2p63snln^\ensuremath'l^\ensuremath' resonances associated with 2s\ensuremath→nl (n=3,4) core excitations, and 2p53snln^\ensuremath'l^\ensuremath' resonances associated with 2p\ensuremath→nl (n=3,…,\ensuremath∞) core excitations. The experimental DR results are compared with theoretical calculations using the multiconfiguration Dirac-Fock (MCDF) method for DR via the 3s\ensuremath→3pn^\ensuremath'l^\ensuremath' and 3s\ensuremath→3dn^\ensuremath'l^\ensuremath'(both n^\ensuremath'=3,…,6) and 2p53s3ln^\ensuremath'l^\ensuremath' (n^\ensuremath'=3,4) capture channels. Finally, the experimental and theoretical plasma DR rate coefficients for Si\phantom\rule0.3em0exIV forming Si\phantom\rule0.3em0exIII are derived and compared with previously available results.