vix.ing · top · new · best · stats · spec

Theory of a magnetically controlled quantum-dot spin transistor

2007/05/31 by Daniel F. Urban, Daniel Urban, Matthias Braun +1 · 1 citation
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Condensed matter physics #Electron #Ferromagnetism #Magnetic field #Magnetic properties of thin films #Magnetoresistance #Non-equilibrium thermodynamics #Physics #Quantum and electron transport phenomena #Quantum dot #Quantum mechanics #Spin (aerodynamics) #Spin Hall effect #Spin engineering #Spin polarization #Spin transistor #Tunnel magnetoresistance #cond-mat.mes-hall

paper · pdf · doi:10.1103/physrevb.76.125306

published as Phys. Rev. B 76, 125306 (2007) · 7 pages, 6 figures

openalex publication_date 2007/09/11 · arxiv created 2007/09/28 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

We examine transport through a quantum dot coupled to three ferromagnetic leads in the regime of weak tunnel coupling. A finite source-drain voltage generates a nonequilibrium spin on the otherwise nonmagnetic quantum dot. This spin accumulation leads to magnetoresistance. A ferromagnetic but current-free base electrode influences the quantum-dot spin via incoherent spin-flip processes and coherent spin precession. As the dot spin determines the conductance of the device, this allows for a purely magnetic transistorlike operation. We analyze the effect of both types of processes on the electric current in different geometries.

Citations

Cited by

Related