2007/02/13 by Thomas L. Schmidt, T. L. Schmidt, A. Komnik · 1 citation
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat.str-el
paper · pdf · doi:10.1103/physrevb.76.035113
published as Phys. Rev. B 76 (2007), 035113 · 8 pages, 3 figures, submitted to PRB
arxiv created 2007/02/13 · openalex publication_date 2007/07/18 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We analyze the transport properties of a Luttinger liquid with an embedded impurity of explicitly time-dependent strength. We employ a radiative boundary condition formalism to describe the coupling to the voltage sources. Assuming the impurity time dependence to be oscillatory, we present a full analytic perturbative result in impurity strength for arbitrary interaction parameter calculated with the help of Coulomb gas expansion (CGE). Moreover, a full analytic solution beyond the above restriction is possible for a special nontrivial interaction strength which has been achieved independently by full resummation of CGE series as well as via refermionization technique. The resulting nonlinear current-voltage characteristic turns out to be very rich due to the presence of the additional energy scale associated with the impurity oscillation frequency. In accordance with the previous studies, we also find an enhancement of the linear conductance of the wire to values above the unitary limit G0=2e2∕h.