2007/06/30 by X. L. Lei · 1 citation
Engineering · Physics and Astronomy · #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #Semiconductor materials and devices #cond-mat.mes-hall
paper · pdf · doi:10.1063/1.2783260
published as Applied Physics Letters 91, 112104 (2007) · 4 pages, 2 figues, published version
openalex publication_date 2007/09/10 · arxiv created 2007/09/19 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Magnetoresistance oscillations in two-dimensional electron systems driven simultaneously by a strong direct current and a microwave irradiation are analyzed within a unified microscopic scheme treating both excitations on an equal footing. The microwave-induced resistance oscillations are described by a parameter ϵω proportional to the radiation frequency, while the dc-induced resistance oscillations are governed by a parameter ϵj proportional to the current density. In the presence of both a microwave radiation and a strong dc, the combined parameter ϵω+ϵj is shown to control the main resistance oscillations, in agreement with the recent measurement [Zhang et al., Phys. Rev. Lett. 98, 106804 (2007)].