Multiterminal Nanowire Junctions of Silicon: A Theoretical Prediction of Atomic Structure and Electronic Properties

2007/06/09 by Павел В. Аврамов, Pavel V. Avramov, Leonid A. Chernozatonskii +4 · 1 citation
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Nanowire Synthesis and Applications #Semiconductor materials and interfaces #cond-mat.mtrl-sci

paper · pdf · doi:10.1021/nl070973y

13 pages, 3 figures, 1 table

openalex publication_date 2007/06/09 · arxiv created 2007/09/14 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Using an empirical scheme, the atomic structure of a new exotic class of silicon nanoclusters was elaborated upon the central icosahedral core (Si−IC) and pentagonal petals (Si−PP) growing from Si−IC vertexes. It was shown that Si−IC/Si−PP interface formation is energetically preferable. Some experimental observations of silicon nanostructures can be explained by the presence of the proposed objects. The extended Huckel theory electronic structure calculations demonstrate an ability of the proposed objects to act as nanoscale tunnel junctions.

Citations

• Density-functional theory study of the electronic structure of thinSi∕SiO2quantum nanodots and nanowires

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