2006/09/30 by A. S. Moskalenko, Jamal Berakdar, J. Berakdar +2
Engineering · Materials Science · Physics and Astronomy · #Semiconductor materials and devices #Semiconductor materials and interfaces #Silicon Nanostructures and Photoluminescence #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevb.76.085427
published as Phys. Rev. B 76, 085427 (2007) · 8 pages, 5 figures
arxiv created 2007/01/14 · openalex publication_date 2007/08/20 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
We calculate the ground and excited electron and hole levels in spherical Si quantum dots inside SiO2 in a multiband effective mass approximation. The Luttinger Hamiltonian is used for holes, and the strong anisotropy of the conduction electron effective mass in Si is taken into account. As the boundary conditions for the electron and hole wave functions, we use the continuity of the wave functions and the flux at the boundaries of the quantum dots.