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Magnetocrystalline anisotropy and magnetization reversal inGa1−xMnxPsynthesized by ion implantation and pulsed-laser melting

2007/03/23 by C. Bihler, M. Kraus, H. Huebl +15
Materials Science · Physics and Astronomy · #Advanced Condensed Matter Physics #Magnetic and transport properties of perovskites and related materials #ZnO doping and properties #cond-mat.mtrl-sci

paper · pdf · doi:10.1103/physrevb.75.214419

published as Phys. Rev. B 75, 214419 (2007)

arxiv created 2007/03/23 · openalex publication_date 2007/06/18 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28

Abstract

We report the observation of ferromagnetic resonance (FMR) and the determination of the magnetocrystalline anisotropy in (100)-oriented single-crystalline thin film samples of Ga_1\ensuremath-xMnxP with x=0.042. The contributions to the magnetic anisotropy were determined by measuring the angular and the temperature dependencies of the FMR resonance fields and by superconducting quantum interference device magnetometry. The largest contribution to the anisotropy is a uniaxial component perpendicular to the film plane; however, a negative contribution from cubic anisotropy is also found. Additional in-plane uniaxial components are observed at low temperatures, which lift the degeneracy between the in-plane [011] and [011] directions as well as between the in-plane [010] and [001] directions. Near T=5\phantom\rule0.3em0exK, the easy magnetization axis is close to the in-plane [011] direction. All anisotropy parameters decrease with increasing temperature and disappear above the Curie temperature TC. A consistent picture of the magnetic anisotropy of ferromagnetic Ga_1\ensuremath-xMnxP emerges from the FMR and magnetometry data. The latter can be successfully modeled when both coherent magnetization rotation and magnetic domain nucleation are considered.

Citations