Spin relaxation time, spin dephasing time and ensemble spin dephasing time in n-type GaAs quantum wells

2006/10/31 by C. Lü, Chao‐Yang Lu, J. L. Cheng +4
Physics and Astronomy · #Physics of Superconductivity and Magnetism #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat.mtrl-sci #cond-mat.other

paper · pdf · doi:10.1016/j.physleta.2007.02.030

published as Phye. Lett. A 365, 501 (2007). · 4 pages, 2 figures, to be published in Phys. Lett. A

arxiv created 2007/02/06 · openalex publication_date 2007/02/14 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We investigate the spin relaxation and spin dephasing of n-type GaAs quantum wells. We obtain the spin relaxation time T₁, the spin dephasing time T₂ and the ensemble spin dephasing time T₂^∗ by solving the full microscopic kinetic spin Bloch equations, and we show that, analogous to the common sense in an isotropic system for conduction electrons, T₁, T₂ and T₂^∗ are identical due to the short correlation time. The inhomogeneous broadening induced by the D'yakonov-Perel term is suppressed by the scattering, especially the Coulomb scattering, in this system.

Citations

• Control of spin coherence inn-type GaAs quantum wells using strain
• Multisubband effect in spin dephasing in semiconductor quantum wells
• Spintronics: Fundamentals and applications
• Spin-Orbit Coupling Effects in Zinc Blende Structures
• Hot-electron effect in spin dephasing inn-type GaAs quantum wells

Cited by

• Spin diffusion/transport in n-type GaAs quantum wells