2006/11/30 by P. Mokry, Pavel Mokrý, A. K. Tagantsev +2 · 3 citations
Engineering · Materials Science · Physics and Astronomy · #Acoustic Wave Resonator Technologies #Dielectric materials and actuators #Ferroelectric and Piezoelectric Materials #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevb.75.094110
published as Phys. Rev. B 75, 094110 (2007) · subm. to PRB. This verion is extended by appendix
arxiv created 2007/02/15 · openalex publication_date 2007/03/16 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
The impact of free charges on the local pressure on a charged ferroelectric domain wall produced by an electric field has been analyzed. A general formula for the local pressure on a charged domain wall is derived considering full or partial compensation of bound polarization charges by free charges. It is shown that the compensation can lead to a very strong reduction of the pressure imposed on the wall from the electric field. In some cases this pressure can be governed by small nonlinear effects. It is concluded that the free charge compensation of bound polarization charges can lead to substantial reduction of the domain wall mobility even in the case when the mobility of free charge carriers is high. This mobility reduction gives rise to an additional imprint mechanism which may play essential role in switching properties of ferroelectric materials. The effect of the pressure reduction on the compensated charged domain walls is illustrated for the case of 180\ifmmode^∘\else\textdegree\fi ferroelectric domain walls and of 90\ifmmode^∘\else\textdegree\fi ferroelectric domain walls with the head-to-head configuration of the spontaneous polarization vectors.