Defect-induced magnetism in graphene

2006/10/31 by Oleg V. Yazyev, Lothar Helm · 48 citations
Materials Science · Physics and Astronomy · #Carbon Nanotubes in Composites #Graphene research and applications #Quantum and electron transport phenomena #cond-mat.mtrl-sci

paper · pdf · doi:10.1103/physrevb.75.125408

published as Phys. Rev. B 75, 125408 (2007) · 5 pages, 6 figures

openalex publication_date 2007/03/08 · arxiv created 2007/03/15 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28

Abstract

We study from first principles the magnetism in graphene induced by single carbon atom defects. For two types of defects considered in our study, the hydrogen chemisorption defect and the vacancy defect, the itinerant magnetism due to the defect-induced extended states has been observed. Calculated magnetic moments are equal to 1\ensuremathμ_B per hydrogen chemisorption defect and 1.12--1.53\ensuremathμ_B per vacancy defect depending on the defect concentration. The coupling between the magnetic moments is either ferromagnetic or antiferromagnetic, depending on whether the defects correspond to the same or to different hexagonal sublattices of the graphene lattice, respectively. The relevance of itinerant magnetism in graphene to the high-T_C magnetic ordering is discussed.

Citations

• Generalized Gradient Approximation Made Simple
• Special points for Brillouin-zone integrations
• A Theory of Metallic Ferro- and Antiferromagnetism on Zener's Model

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