2007/01/17 by A. V. Malyshev, В. А. Малышев, V. A. Malyshev +2
Engineering · Physics and Astronomy · #Molecular Junctions and Nanostructures #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat.dis-nn
paper · pdf · doi:10.1103/physrevlett.98.087401
published as Phys. Rev. Lett. 98, 087401 (2007) · 4 pages, 4 figures, to appear in Phys. Rev. Lett
arxiv created 2007/01/17 · openalex publication_date 2007/02/21 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We argue that the time-resolved spectrum of selectively-excited resonance fluorescence at low temperature provides a tool for probing the quantum-mechanical level repulsion in the Lifshits tail of the electronic density of states in a wide variety of disordered materials. The technique, based on detecting the fast growth of a fluorescence peak that is redshifted relative to the excitation frequency, is demonstrated explicitly by simulations on linear Frenkel exciton chains.