2006/04/30 by Yasuhiro Utsumi · 2 citations
Computer Science · Engineering · Physics and Astronomy · #Molecular Junctions and Nanostructures #Quantum Information and Cryptography #Quantum and electron transport phenomena #cond-mat.mes-hall #cond-mat.str-el
paper · pdf · doi:10.1103/physrevb.75.035333
published as Phys. Rev. B 75, 035333 (2007) · 10 pages, 6 figures, formal part extended; to appear in Phys. Rev. B
arxiv created 2006/12/01 · openalex publication_date 2007/01/24 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
Motivated by recent real-time electron counting experiments, we evaluate the full counting statistics for the probability distribution of the electron number inside a quantum dot which is weakly coupled to source and drain leads. A non-Gaussian exponential distribution appears when there is no dot state close to the lead chemical potentials. We propose the measurement of the joint probability distribution of current and electron number, which reveals correlations between the two observables. We also show that for increasing strength of tunneling, the quantum fluctuations qualitatively change the probability distribution of the electron number. In this paper, we derive the cumulant generating functions (CGFs) of the joint probability distribution for several cases. The Keldysh generating functional approach is adopted to obtain the CGFs for the resonant-level model and for the single-electron transistor in the intermediate conductance regime. The general form for the CGF of the joint probability distribution is provided within the Markov approximation in an extension of the master equation approach [D. A. Bagrets and Yu. V. Nazarov, Phys. Rev. B 67, 085316 (2003)].