2005/01/20 by Navinder Singh, N. Kumar, N Kumar · 1 citation
Physics and Astronomy · #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #Strong Light-Matter Interactions #cond-mat.stat-mech
paper · pdf · doi:10.1088/1742-5468/2005/06/l06001
published as J. Stat. Mech. (2005) L06001 · 4 pages
arxiv created 2005/01/20 · openalex publication_date 2005/06/28 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/30
Generalizing the stochastic model known for a driven dissipative granular gas, we have derived the steady-state non-degenerate electron distribution for a semiconductor driven far from equilibrium by the interband photo-excitation assumed uniform over the nanoscale sample. Partitioning of the total inelastic electron scattering into dissipative electron–electron and electron–phonon components is included. The model is applicable to a photo-excited semiconducting sample with fast removal of the electrons by electron–hole recombination from the bottom of the conduction band.