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Molecular dynamics simulations of palladium cluster growth on flat and rough graphite surfaces

2004/06/25 by Pascal Brault, Guy Moebs, G. Moebs · 7 citations
Chemistry · Earth and Planetary Sciences · Materials Science · Physics and Astronomy · #Atom (system on chip) #Chemical and Physical Properties of Materials #Chemical physics #Chemistry #Classical mechanics #Cluster (spacecraft) #Composite material #Computational chemistry #Condensed matter physics #Crystal structure #Crystallography #Exponent #Exponential function #Geometry #Graphene research and applications #Graphite #Kinetic energy #Materials science #Metallurgy #Molecular dynamics #Octahedron #Physics #Surface (topology) #Surface finish #Surface roughness #cond-mat.mtrl-sci #nanoparticles nucleation surface interactions #physics.atm-clus

paper · pdf · doi:10.1051/epjap:2004161

published in The European Physical Journal Applied Physics 28(1), 43-50 (EDP Sciences)

openalex publication_date 2004/06/25 · arxiv created 2006/09/07 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

Parallel Molecular Dynamics simulations are conducted for describing growth on surfaces with different kind of roughness: a perfect ordered crystalline flat graphite surface, a disordered rough graphite surface and flat surface with an ordered localized defect. It is shown that disordered rough surfaces results in a first step to reduction of the sticking coefficient, increased cluster density, size reduction. Structure of the clusters shows the disappearance of the octahedral site characteristic of compact structure. Isolated defect induces cluster-cluster interactions that modify growth compared to perfect flat surface. Kinetic study of growth shows power law tαz evolution for low impinging atom kinetic energy. Increasing kinetic energy, on all kinds of surfaces, results in a slightly larger exponent z, but fitting by an exponential function is quite good too. Lattice expansion is favoured on rough surfaces but increasing incoming atom kinetic energy weakens this effect.

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