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CsPbBr3 Solar Cells: Controlled Film Growth through Layer-by-Layer Quantum Dot Deposition

2017/10/25 by Jacob B. Hoffman, Gary Zaiats, Isaac Wappes +1 · 1 citation
Engineering · Materials Science · #Perovskite Materials and Applications #Quantum Dots Synthesis And Properties #Chalcogenide Semiconductor Thin Films

paper · pdf · doi:10.1021/acs.chemmater.7b03751

openalex publication_date 2017/10/25 · openalex created_date 2017/11/10 · openalex updated_date 2026/08/01

Abstract

High Resolution Image Download MS PowerPoint Slide All inorganic cesium lead bromide (CsPbBr 3 ) perovskite is a more stable alternative to methylammonium lead bromide (MAPbBr 3 ) for designing high open-circuit voltage solar cells and display devices. Poor solubility of CsBr in organic solvents makes typical solution deposition methods difficult to adapt for constructing CsPbBr 3 devices. Our layer-by-layer methodology, which makes use of CsPbBr 3 quantum dot (QD) deposition followed by annealing, provides a convenient way to cast stable films of desired thickness. The transformation from QDs into bulk during thermal annealing arises from the resumption of nanoparticle growth and not from sintering as generally assumed. Additionally, a large loss of organic material during the annealing process is mainly from 1-octadecene left during the QD synthesis. Utilizing this deposition approach for perovskite photovoltaics is examined using typical planar architecture devices. Devices optimized to both QD spin-casting concentration and overall CsPbBr 3 thickness produce champion devices that reach power conversion efficiencies of 5.5% with a V oc value of 1.4 V. The layered QD deposition demonstrates a controlled perovskite film architecture for developing efficient, high open-circuit photovoltaic devices.

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