Strong localization of doped holes inLa1−xSrxFeO3from angle-resolved photoemission spectra

2006/03/13 by H. Wadati, Hiroki Wadati, Akira Chikamatsu +14 · 1 citation
Materials Science · Physics and Astronomy · #Advanced Condensed Matter Physics #Electronic and Structural Properties of Oxides #Magnetic and transport properties of perovskites and related materials #cond-mat.mtrl-sci #cond-mat.str-el

paper · pdf · doi:10.1103/physrevb.74.115114

published as Phys. Rev. B 74, 115114 (2006) · 5 pages, 5 figures

arxiv created 2006/03/13 · openalex publication_date 2006/09/19 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28

Abstract

We have performed an angle-resolved photoemission spectroscopy study of La_0.6Sr_0.4FeO₃ using in situ prepared thin films and determined its band structure. The experimental band dispersions could be well explained by an empirical band structure assuming the G-type antiferromagnetic state. However, the Fe\phantom\rule0.3em0ex3d bands were found to be shifted downward relative to the Fermi level (E_F) by \ensuremath∼1\phantom\rule0.3em0exeV compared with the calculation and to form a gap of \ensuremath∼1\phantom\rule0.3em0exeV at E_F. We attribute this observation to a strong localization effect of doped holes due to polaron formation.

Citations

• Hole-doping-induced changes in the electronic structure ofLa1−xSrxFeO3: Soft x-ray photoemission and absorption study of epitaxial thin films
• High-energy photoemission on Fe 3 O 4 : Small polaron physics and the Verwey transition

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