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Hysteretic memory effects in disordered magnets

2005/09/30 by Helmut G. Katzgraber, Gergely T. Zimányi, Gergely T. Zimanyi
Mathematics · Physics and Astronomy · #Condensed matter physics #Geometry #Ising model #Magnet #Magnetic properties of thin films #Mathematics #Physics #Point (geometry) #Quantum many-body systems #Quantum mechanics #Statistical physics #Symmetry (geometry) #Theoretical and Computational Physics #cond-mat.dis-nn

paper · pdf · doi:10.1103/physrevb.74.020405

published as Phys. Rev. B 74, 020405(R) (2006) · 4 pages, 5 figures

arxiv created 2006/07/28 · openalex publication_date 2006/07/28 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

We study the return point as well as the complementary point memory effect numerically with paradigmatic models for random magnets and show that already simple systems with Ising spin symmetry can reproduce the experimental results of Pierce et al. where both memory effects become more pronounced for increasing disorder and return point memory is always better than complementary point memory.

Citations