2005/04/28 by K. M. Indlekofer, Joachim Knoch, J. Knoch +2 · 1 citation
Engineering · Materials Science · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Graphene research and applications #Quantum and electron transport phenomena #cond-mat.other
paper · pdf · doi:10.1103/physrevb.72.125308
published as Phys. Rev. B 72, 125308 (2005)
arxiv created 2005/04/28 · openalex publication_date 2005/09/07 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
In this paper, we combine the modified electrostatics of a one-dimensional transistor structure with a quantum kinetic formulation of Coulomb interaction and nonequilibrium transport. A multi-configurational self-consistent Green's function approach is presented, accounting for fluctuating electron numbers. On this basis we provide a theory for the simulation of electronic transport and quantum charging effects in nanotransistors, such as a gated carbon nanotube and whisker devices and one-dimensional CMOS transistors. Single-electron charging effects arise naturally as a consequence of the Coulomb repulsion within the channel.