2003/02/25 by S. De Franceschi, J. A. van Dam, Jorden A. van Dam +5 · 2 citations
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Nanowire Synthesis and Applications #Quantum and electron transport phenomena #cond-mat.mes-hall
paper · pdf · doi:10.1063/1.1590426
published as Appl. Phys. Lett. 83, 344 (2003) · 4 pages, 3 figures
arxiv created 2003/02/25 · openalex publication_date 2003/07/10 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/04
We report on the fabrication and electrical characterization of field-effect devices based on wire-shaped InP crystals grown from Au catalyst particles by a vapor–liquid–solid process. Our InP wires are n-type doped with diameters in the 40–55-nm range and lengths of several micrometers. After being deposited on an oxidized Si substrate, wires are contacted individually via e-beam fabricated Ti/Al electrodes. We obtain contact resistances as low as ∼10 kΩ, with minor temperature dependence. The distance between the electrodes varies between 0.2 and 2 μm. The electron density in the wires is changed with a back gate. Low-temperature transport measurements show Coulomb-blockade behavior with single-electron charging energies of ∼1 meV. We also demonstrate energy quantization resulting from the confinement in the wire.