2005/04/26 by M. Beck, Markus Beck, Claus Metzner +3 · 2 citations
Engineering · Physics and Astronomy · #Magnetic properties of thin films #Quantum and electron transport phenomena #Semiconductor materials and devices #cond-mat.mtrl-sci
paper · pdf · doi:10.1209/epl/i2006-10151-4
published as Europhys. Lett., 75 (4), pp. 597-603 (2006) · 5 pages, 6 figures
arxiv created 2005/04/26 · openalex publication_date 2006/07/11 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/30
We study the transport of spin-polarized electrons in n-GaAs using spatially resolved continuous-wave Faraday rotation. From the measured steady-state distribution, we determine spin relaxation times under drift conditions and, in the presence of strain, the induced spin splitting from the observed spin precession. Controlled variation of strain along [110] allows us to deduce the deformation potential causing this effect, while strain along [100] has no effect. The electric-field dependence of the spin lifetime is explained quantitatively in terms of an increase of the electron temperature.