2004/09/08 by Jaroslav Fabian, J. Fabian, Igor Žutić +1
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Quantum and electron transport phenomena #Semiconductor materials and devices #cond-mat.other
paper · pdf · doi:10.1063/1.1886251
published as Appl. Phys. Lett. 86, 133506 (2005) · 4 pages, 2 figures
arxiv created 2004/09/08 · openalex publication_date 2005/03/22 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
The equivalent electrical circuit of the Ebers–Moll-type is introduced for magnetic bipolar transistors. In addition to conventional diodes and current sources, the new circuit comprises two novel elements due to spin-charge coupling. A classification scheme of the operating modes of magnetic bipolar transistors in the low bias regime is presented.