2025/04/03 by Shengyu Bao, Zongwei Wang, Yuhang Yang +5 · 1 citation
Engineering · #Advanced Memory and Neural Computing #Ferroelectric and Negative Capacitance Devices #Semiconductor materials and devices
paper · doi:10.1109/ted.2025.3554165
In this work, we introduce an innovative NAND-gate array structure that optimizes cell density through local series connection. By implementing a p-well isolation in combination with the substrate bias effect, we effectively mitigate the operating voltage constraints on series-connected cells. This design ensures symmetric read operations and maintains uniform read margins among cells in the NAND-gate array, achieving a record cell size of 0.045 μm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>2</roman></sup> at the 40-nm technology node. This design demonstrates robust reliability with an endurance of 100k cycles and a ten-year retention at 150 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">∘</sup>C. Moreover, the implementation of deep trench isolation (DTI) technology enables further density enhancements, with a projected cell area of 0.0255 μm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>2</roman></sup> at the 28-nm technology node. This approach offers significant advancements in resistive random access memory (RRAM) density, making it highly suitable for high-density memory and computing applications.