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Temperature- and variability-aware compact modeling of ferroelectric FDSOI FET for memory and emerging applications

2024/05/17 by Swetaki Chatterjee, Shubham Kumar, Amol Gaidhane +4
Engineering · #Advanced Memory and Neural Computing #Computer science #Dielectric #Electronic engineering #Engineering #Ferroelectric and Negative Capacitance Devices #Ferroelectricity #Materials science #Optoelectronics #Semiconductor materials and devices

paper · doi:10.1016/j.sse.2024.108954

openalex publication_date 2024/05/17 · crossref created 2024/05/17 · crossref issued 2024/08/01 · crossref published 2024/08/01 · crossref published-print 2024/08/01 · openalex created_date 2025/10/10 · crossref deposited 2026/05/13 · crossref indexed 2026/08/01 · openalex updated_date 2026/08/01

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