2024/02/26 by Yun Chen, Zuohui Liu, Hengxu Wu +4 · 1 citation
Materials Science · #Diamond and Carbon-based Materials Research #Carbon Nanotubes in Composites #Graphene research and applications
paper · doi:10.1109/ted.2024.3368386
Fabricating field emitter devices simultaneously with low turn-on field and high current emission stability, which is critical for practical applications, has been a longstanding goal. In current work, an electrochemical etching method has been employed to successfully fabricate large-scale, highly ordered bamboo-like 4H-SiC nanowires which were then used to develop high-performance field emitters. The properties of bamboo-like morphology, highly ordered, sharp tip, single-crystal orientation, and good heat dissipation endow the as-developed field emitters with high performance. As a result, the SiC field emitter exhibits a low turn-on field of 0.54 V/ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">μ m </tex-math></inline-formula> and excellent current emission stability with the optimum current density fluctuation of only 0.8% within the operation duration of 5 h. This work provides a new perspective for developing superior field emitters.