Normally OFF Trench CAVET With Active Mg-Doped GaN as Current Blocking Layer

2016/12/17 by Dong Ji, Matthew A. Laurent, Anchal Agarwal +5 · 8 citations
Physics and Astronomy · Materials Science · Engineering · #GaN-based semiconductor devices and materials #Ga2O3 and related materials #Silicon Carbide Semiconductor Technologies

paper · doi:10.1109/ted.2016.2632150

Abstract

A normally OFF trench current aperture vertical electron transistor (CAVET) was designed and successfully fabricated with Mg-doped p-GaN current blocking layers. The buried Mg-doped GaN was activated using a postregrowth annealing process. The source-to-drain body diode showed an excellent p-n junction characteristics, blocking over 1 kV, sustaining a maximum blocking electric field of 3.8 MV/cm. Three-terminal breakdown voltages of trench-CAVETs, measured up to 225 V, were limited by dielectric breakdown. This paper highlights the achievement of the well-behaved buried p-n junction that has been a formidable challenge in the success of vertical GaN devices.

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