The Impact of Noncontinuum Thermal Transport on the Temperature of AlGaN/GaN HFETs

2014/05/06 by Nazli Donmezer, Nazlı Dönmezer, Samuel Graham · 1 citation
Physics and Astronomy · Engineering · #GaN-based semiconductor devices and materials #Silicon Carbide Semiconductor Technologies #Advancements in Semiconductor Devices and Circuit Design

paper · doi:10.1109/ted.2014.2318672

Abstract

The effects of power density and heat generation zone size on the hotspot temperature of AlGaN/GaN HFET devices were predicted using an electrothermal modeling approach. The thermal response was modeled using a multiscale model that accounted for ballistic-diffusive phonon transport effects in the heat generation zone near the gate and diffusive transport effects outside of this zone. The Joule heating distribution was calculated using a hydrodynamic model in Sentaurus Device. The hotspot temperatures at different biasing conditions were determined using the multiscale thermal model and compared with a fully diffusive transport model. The results show that the hotspot temperature is higher when ballistic-diffusive transport effects are considered and this difference increases with increasing power density in the AlGaN/GaN HFETs.

Citations

• Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

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• Advanced physical modeling approaches for high-precision TCAD simulation of GaN HEMT power devices: a review. [europepmc]

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