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Giant switchable ferroelectric photovoltage in double-perovskite epitaxial films through chemical negative strain

2025/04/23 by Jie Tu, Hangren Li, Xudong Liu +19 · 1 voice · 1 citation
Engineering · Materials Science · #Ferroelectric and Piezoelectric Materials #Multiferroics and related materials #Perovskite Materials and Applications

paper · doi:10.1126/sciadv.ads4925

openalex publication_date 2025/04/23 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/31

Abstract

Double-perovskite films have been extensively studied in multifunctional fields due to their modifiability. Here, a controlled process strategy to induce chemical strain and anomalous Poisson deformation is proposed for perovskite-based films. The chemical negative strain in the local-ordering BiSmFe 2 O 6 double-perovskite films can be regulated by oxygen engineering to cause the effectively tunable bandgap. We markedly increased the switchable open-circuit voltage to ~1.56 V from ~0.50 V for Pt/BiSmFe 2 O 6 /Nb-SrTiO 3 devices, which is the highest in single-layer perovskite-based ferroelectric photovoltaic perpendicular devices under white light-emitting diode irradiation. The multifield composite action mechanism reveals the electrical cause of the large open-circuit voltage. The synergy of the optical fields and ferroelectric fields provides the possibility of multilevel storage. Structural characterizations indicate that the chemical strain offers a dual role of lattice distortion and vacancy migration. The strategy of controllable chemical strain facilitates further exploration of the application potential of ferroelectric materials for multifunctional electronic devices.

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