1986/05/10 by A Kurobe, A. Kurobe
Physics and Astronomy · #Physics of Superconductivity and Magnetism #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices
paper · doi:10.1088/0022-3719/19/13/011
crossref issued 1986/05/10 · crossref published 1986/05/10 · crossref published-print 1986/05/10 · openalex publication_date 1986/05/10 · crossref published-online 2000/11/23 · crossref created 2002/07/26 · crossref deposited 2020/04/11 · openalex created_date 2025/10/10 · crossref indexed 2026/07/28 · openalex updated_date 2026/07/30
The magnetoresistance due to the variable-range hopping conduction is calculated by the critical path method in the Anderson-localised regime of semiconductors taking into account the electron-electron interaction. In the presence of the intra-state interaction, a magnetic field suppresses two types of the hopping process. This results in the positive contribution to the magnetoresistance. The degree of localisation is a function of energy and this feature gives rise to the negative contribution. The total magnetoresistance is positive in low magnetic fields and is negative at high magnetic fields. The inter-state interaction suppresses the positive contribution. The results are compared with those of experiments on 1T-TaS 2 and 1T-TaS 2-x Se.