1976/10/16 by P. K. C. Pillai, Rabinder Nath · 1 citation
Engineering · Materials Science · #Advanced Thermoelectric Materials and Devices #Dielectric materials and actuators #Thermal properties of materials
paper · doi:10.1002/pssa.2210370217
crossref issued 1976/10/16 · crossref published 1976/10/16 · crossref published-print 1976/10/16 · openalex publication_date 1976/10/16 · crossref created 2007/01/12 · crossref deposited 2021/07/04 · openalex created_date 2025/10/10 · crossref indexed 2026/08/01 · openalex updated_date 2026/08/01
An improved model of the photodielectric effect in photoconductors including the effect of traps is given. The PDE equations for the fractional change in capacitance and conductance, which are closely related to Debye length and the ratio nt/n0, are derived. Good agreement of the experimental results with theory for ZnO photocapacitor shows the potential applicability of the improved model for real photoconductors.