2025/01/01 by Cheul Hyun Yoon, Seok Hyun Yoon, Gil Su Jeon +3 · 1 voice
Engineering · Materials Science · #Advancements in Semiconductor Devices and Circuit Design #Graphene research and applications #Nanowire Synthesis and Applications
paper · pdf · doi:10.1039/d5nr00656b
openalex publication_date 2025/01/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/01
), examining their current-voltage characteristics based on Fowler-Nordheim theory within a three-terminal vacuum channel transistor system. In this configuration, the emitter is aligned towards the drain electrode, parallel to the substrate, and the carrier dynamics were investigated in detail within the TMDC channels. We further calculated the screening effect induced by gate bias modulation, taking into account the extent of the monolayer TMDC edge protrusion into the vacuum channel. Additionally, we studied the distinctive modulation of the field enhancement factor, which can be adjusted through gate bias control. Finally, under a source-drain bias of 100 V, the transistors demonstrated both cutoff and maximum oscillation frequencies in the sub-terahertz to terahertz range, confirming their high-frequency operational potential.