2026/01/01 by Yu-Shi Tsai, Hung-Jung Shen, Chia-Hung Wu +4 · 1 voice
Engineering · Physics and Astronomy · #GaN-based semiconductor devices and materials #Plasmonic and Surface Plasmon Research #Strong Light-Matter Interactions
paper · doi:10.1039/d5nr04417k
openalex publication_date 2026/01/01 · openalex created_date 2026/01/16 · openalex updated_date 2026/08/01
As on-chip integration advances, nanoscale light sources become critical, necessitating lasers that overcome the diffraction limit. Plasmonic nanowire lasers, leveraging surface plasmon polaritons at metal-semiconductor interfaces, enable ultracompact mode confinement. While recent efforts have enhanced their performance through structural design and two-dimensional materials, the complex multimode dynamics in nanowire cavities remain insufficiently understood. Here, we present a systematic approach to identify dominant transverse and longitudinal modes in InP nanowire lasers, offering insights into internal mode distributions. Building upon our previous demonstration of graphene-assisted threshold reduction and mode volume confinement in near UV nanowire lasers, we extend this strategy to the near-infrared regime. This work provides a deeper understanding of lasing behavior in nanowire systems, contributing to the design of integrated photonic components for high-density optical interconnects.