2024/03/14 by Ilona-Stefana Ninca, Ninca, Ilona-Stefana, I. Bloch +27 · 1 citation
Engineering · #Advanced Sensor Technologies Research #FOS: Physical sciences #Icing and De-icing Technologies #Instrumentation and Detectors (physics.ins-det)
paper · pdf · doi:10.48550/arxiv.2403.09550
openalex publication_date 2024/03/14 · openalex created_date 2024/03/16 · openalex updated_date 2026/08/01
The breakdown voltage of silicon sensors without special surface is known to be affected by the ambient humidity. To understand the sensor's humidity sensitivity, Synopsys TCAD was used to simulate n-in-p test structures for different effective relative humidity. Photon emission of hot electrons was imaged with a microscope to locate breakdown in the edge-region of the sensor. The Top-Transient Current Technique was used to measure charge transport near the surface in the breakdown region of the sensor. Using the measurements and simulations, the evolution of the electric field, carrier densities and avalanche breakdown in the periphery of p-bulk silicon sensors is presented.