2019/05/03 by Muhammad Shakir, S. Hou, Raheleh Hedayati +3 · 1 voice · 1 citation
Engineering · #Advanced DC-DC Converters #Semiconductor materials and devices #Silicon Carbide Semiconductor Technologies
paper · pdf · doi:10.3390/electronics8050496
openalex publication_date 2019/05/03 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/30
A Process Design Kit (PDK) has been developed to realize complex integrated circuits in Silicon Carbide (SiC) bipolar low-power technology. The PDK development process included basic device modeling, and design of gate library and parameterized cells. A transistor–transistor logic (TTL)-based PDK gate library design will also be discussed with delay, power, noise margin, and fan-out as main design criterion to tolerate the threshold voltage shift, beta ( β ) and collector current ( I C ) variation of SiC devices as temperature increases. The PDK-based complex digital ICs design flow based on layout, physical verification, and in-house fabrication process will also be demonstrated. Both combinational and sequential circuits have been designed, such as a 720-device ALU and a 520-device 4 bit counter. All the integrated circuits and devices are fully characterized up to 500 °C. The inverter and a D-type flip-flop (DFF) are characterized as benchmark standard cells. The proposed work is a key step towards SiC-based very large-scale integrated (VLSI) circuits implementation for high-temperature applications.