Theory of Photoelectric Emission from Semiconductors

1962/07/01 by E. O. Kane · 1 voice · 1 citation
Engineering · Materials Science · #Photocathodes and Microchannel Plates #Electron and X-Ray Spectroscopy Techniques #Ga2O3 and related materials

paper · doi:10.1103/physrev.127.131

openalex publication_date 1962/07/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/18

Abstract

The yield vs energy relation is determined for a number of possible photoelectric production and escape mechanisms involving volume and surface states in semiconductors. Calculations are based on density-of-states considerations and involve energy-band expansions to lowest nonvanishing order about the threshold point. The "direct" and "indirect" processes involving volume states have yields proportional to E\ensuremath-E_T and (E\ensuremath-E_T)^(5)/(2), respectively. Both processes appear to have been identified experimentally by Gobeli and Allen. The linear yield also requires, in addition to production by "direct" optical excitation, that the observed photoelectrons escape without scattering in the volume or at the surface. Energy and angle distribution functions of the emitted carriers are also determined.

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Discussions

• Consider a semiconductor undergoing an indirect transition due to photon absorption ( Equation 50, here ). The density of states can be written as $$ \rho(E)\propto \frac{m V^2 \int\left[\mathscr{E}_2 [stackexchange, 1 points]

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