Fabrication of silicon W and G center embedded light-emitting diodes for electroluminescence

2024/11/20 by Nikki Ebadollahi, Pradeep Namboodiri, Christian Pederson +6 · 1 voice
Engineering · Materials Science · #Nanowire Synthesis and Applications #Silicon Nanostructures and Photoluminescence #Thin-Film Transistor Technologies

paper · doi:10.1116/6.0004055

openalex publication_date 2024/11/20 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/03

Abstract

The need for reliable quantum light sources drives our research to study color centers (CCs) in silicon as telecommunication O-band emitters. Building from photoluminescence measurements, we compare new electroluminescence measurements. To this end, we synthesized CC-embedded p-i-n junctions in silicon, creating CC light-emitting diode devices. The two types of CCs synthesized were G-centers and W-centers, which show zero-phonon lines at approximately 1279 nm and 1218 nm, respectively. Here, we present our device design, fabrication process flow, and report on the device performance results from measurements to date.

Discussions

• In this #JVSTB Editor's Pick, researchers from @univofmaryland.bsky.social, #NIST, and #UMBC fabricated silicon W- and G- center embedded LEDs to address the need for reliable quantum light sources. d [bsky, 1 points, 0 comments]

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