Remote plasma assisted processing and semiconductor interface electronic structure

2025/01/17 by L. J. Brillson · 1 voice
Materials Science · #Ga2O3 and related materials #ZnO doping and properties #Electronic and Structural Properties of Oxides

paper · doi:10.1116/6.0004200

openalex publication_date 2025/01/17 · openalex created_date 2025/10/10 · openalex updated_date 2026/05/21

Abstract

The development of remote plasma-assisted treatment of semiconductors has helped to drive microelectronics into the nanoscale regime. Dr. Gerry Lucovsky’s pivotal role in this development has made an impact not only in the realization of ultralow defect densities in SiO2/Si transistor junctions but also in the understanding and control of a wide range of semiconductor interfaces. Here, we show how this technique has expanded our understanding of electronic interfaces beyond the Si interface to many different compound semiconductors.

Discussions

• Gerry Lucovsky’s remote plasma-assisted #semiconductor treatments combined with depth-resolved cathodoluminescence spectroscopy have expanded the understanding and control of semiconductor interfaces. [bsky, 1 points, 0 comments]

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