Novel precursor for the preparation of vanadium sulfide layers with atomic layer deposition

2025/02/10 by Zsófia Baji, Zsolt Fogarassy, Attila Sulyok +2 · 1 voice
Materials Science · Engineering · #2D Materials and Applications #Transition Metal Oxide Nanomaterials #Chalcogenide Semiconductor Thin Films

paper · doi:10.1116/6.0004127

openalex publication_date 2025/02/10 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/02

Abstract

The present paper reports on the atomic layer deposition of vanadium sulfide (VS) layers from tetrakis(ethylmethylamino)vanadium and H2S. The deposition of VS layers with these precursors has proven possible between 200 and 300 °C. The prepared layers were amorphous, but a postdeposition annealing in H2S atmosphere yielded crystalline VS layers. The use of this precursor combination has so far not been reported.

Discussions

• Researchers from Hungary report on the #ALDep of vanadium-monosulphide layers from a novel precursor combination, TEMAV & H2S, resulting in amorphous layers that were crystallized upon annealing in H [bsky, 1 points, 0 comments]

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