Towards Improved Polarization Uniformity in Ferroelectric Hf_0.5Zr_0.5O₂ Devices within Back End of Line Thermal Budget for Memory and Neuromorphic Applications

2024/12/15 by Srivari, Padma, Paasio, Ella, Li, Xinye +1 · 1 citation
#Applied Physics (physics.app-ph) #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci)

paper · doi:10.48550/arxiv.2412.11288

Abstract

Thin film ferroelectric devices with ultralow power operation, non-volatile data retention and fast and reliable switching are attractive for non-volatile memory and as synaptic weight elements. However, low thermal budget ferroelectric oxides suffer from crystalline inhomogeneity and defects that makes their large-scale circuit integration challenging. Here, we report on the thermally engineered way to induce wafer-scale homogeneity in Hf_0.5Zr_0.5O₂ capacitors that can lead to high device reliability making their integration possible in ultralow power memory and neuromorphic computing hardware.

Cited by

• Towards Capacitive In-Memory-computing: A perspective on the future of AI hardware

Related

• Formation of Uniform Crystal and Reduction of Electrical Variation in HfZrO₂ Ferroelectric Memory by Thermal Engineering
• Designing high endurance Hf0.5Zr0.5O2 capacitors through engineered recovery from fatigue for non-volatile ferroelectric memory and neuromorphic hardware
• The coupling of polarization and oxygen vacancy migration in ferroelectric Hf0.5Zr0.5O2 thin films enables electrically controlled thermal memories above room temperature
• Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity
• Universal Model for Ferroelectric Capacitors Operating Down to Deep Cryogenic Temperatures