Ferroelectric and field-induced ferroelectric phase formation in atomic-layer-deposited ZrO 2 thin films with TiN electrodes

2025/01/01 by Jae Hee Song, Kyung Do Kim, Jonghoon Shin +8 · 1 voice · 1 citation
Engineering · Materials Science · #Advanced Memory and Neural Computing #Ferroelectric and Negative Capacitance Devices #Ferroelectric and Piezoelectric Materials

paper · doi:10.1039/d5tc01449b

openalex publication_date 2025/01/01 · openalex created_date 2025/06/27 · openalex updated_date 2026/07/02

Abstract

This study explores the origin of ferroelectric phase formation in 10-nm-thick ALD ZrO 2 films by analyzing structural and electrical properties as a function of deposition temperature (280–310 °C) and post-metallization annealing.

Citations

• Phonons and Lattice Dielectric Properties of Zirconia

Cited by

• High-performance dynamic random access memory capacitor with an equivalent oxide thickness of 0.31 nm via stepwise cycling in Y-doped Hf 0.5 Zr 0.5 O 2 thin films

Discussions

• Issue 29 for @JMaterChem C front cover features article "Ferroelectric and field-induced ferroelectric phase formation in atomic-layer-deposited ZrO 2 thin films with TiN electrodes" by Cheol Seong Hw [bsky, 1 points, 0 comments]

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