2026/01/01 by Mashael M Alshaikh, Walaa Al-masri, Wanisa Abdussalam-Mohammed +1 · 1 voice
Engineering · Materials Science · #Graphene research and applications #Muon and positron interactions and applications #Supercapacitor Materials and Fabrication
paper · doi:10.1515/gps-2025-0168
openalex publication_date 2026/01/01 · openalex created_date 2026/06/13 · openalex updated_date 2026/06/24
Abstract Thermal annealing plays a vital role in the production of graphene-based materials and devices, with complex interactions influenced by temperature, graphene thickness, and substrate type. This study conducts a comparative analysis of the effects of annealing on graphene substrates using two different substrates: mica and SiO 2 , evaluated through SEM, AFM, and Raman spectroscopy techniques. Results indicate that annealing does not induce the D-peak indicative of disorder in mica samples, while graphene on SiO 2 exhibited a D-peak prior to annealing, which decreased at 300 °C but intensified at higher temperatures. There were notable blue shifts in the G band (ΔωG) and 2D band (Δω2D) across all samples, with reduced changes observed in thicker graphene on mica. AFM analysis revealed an elevation of mica samples to 11 nm following annealing at 500 °C, attributed to mica dehydroxylation, indicating that graphene acted as a protective layer without altering the morphology. In contrast, SiO 2 samples appeared ‘invisible’ post-annealing at 500 °C, though they were detectable in Raman data, reflecting the underlying roughness. These findings highlight the superior dielectric properties and atomically flat surface of mica, positioning it as a preferable substrate for 2D material integration over the rougher SiO 2 .