Disentangling Orbital and Confinement Contributions to g -Factor in Ge/SiGe Hole Quantum Dots

2026/02/27 by L. Sommer, I. Seidler, F. J. Schupp +15
Materials Science · Physics and Astronomy · #Semiconductor Quantum Structures and Devices #Semiconductor materials and interfaces #Silicon Nanostructures and Photoluminescence #cond-mat.mes-hall #quant-ph

paper · pdf · doi:10.1021/acs.nanolett.6c00999

published as Nano Letters 26, 8117 (2026)

arxiv created 2026/02/27 · openalex publication_date 2026/06/17 · openalex created_date 2026/06/18 · openalex updated_date 2026/07/28 · arxiv updated 2026/07/31

Abstract

-factors at the level of 15%, highlighting its relevance for all-electric qubit manipulation.

Citations

• Spatial uniformity of g-tensor and spin-orbit interaction in germanium hole spin qubits
• Variability of hole spin qubits in planar Germanium
• Using a high-fidelity numerical model to infer the shape of a few-hole Ge quantum dot
• Impact of interface traps on charge noise and low-density transport properties in Ge/SiGe heterostructures
• Spin relaxation and decoherence of holes in quantum dots
• Spin relaxation and anticrossing in quantum dots: Rashba versus Dresselhaus spin-orbit coupling

Related

• Design and Optimization of Spin Dynamics in Ge Quantum Dots: g-Factor Modulation, Dephasing Sweet Spots, and Phonon-Induced Relaxation
• Using a high-fidelity numerical model to infer the shape of a few-hole Ge quantum dot
• Hole-spin qubits in germanium beyond the single-particle regime
• Hole spin splitting in a Ge quantum dot with finite barriers
• Gate modulation of the hole singlet-triplet qubit frequency in germanium