vix.ing · top · new · best · stats · spec

Taming Lattice Strain via Buried Interface Engineering for Reverse-Bias Resilient Perovskite Solar Cells

2026/05/27 by Niqian Du, Shanshan Du, Yaru Du +9 · 1 voice
Engineering · Energy · #Perovskite Materials and Applications #TiO2 Photocatalysis and Solar Cells #Organic Electronics and Photovoltaics

paper · doi:10.1007/s40820-026-02244-2

openalex publication_date 2026/05/27 · openalex created_date 2026/05/27 · openalex updated_date 2026/07/29

Abstract

Inverted perovskite solar cells have achieved exceptional efficiencies, yet their operational stability, particularly under reverse-bias stress, remains a critical challenge. This instability is fundamentally driven by lattice strain, which lowers ion migration barriers and promotes defect formation. Here, we identify the buried hole-transport-layer/perovskite interface as the principal site of strain accumulation. By incorporating 3-fluorothiophene-2-carboxylic acid (3F-2TC) at this buried HTL/perovskite interface, we directly engineer the initial perovskite crystallization template. This buried interface engineering strategy effectively alleviates intrinsic lattice strain, as unambiguously confirmed by grazing-incidence X-ray diffraction analysis. Crucially, we utilize reverse-bias stress as a diagnostic probe to decouple strain relaxation from mere defect passivation, revealing that a low-strain lattice constitutes the primary defense against bias-induced degradation. Consequently, the champion devices achieve a high power conversion efficiency (PCE) of 26.10% and markedly enhanced stability, retaining 91.58% of their initial PCE after 200 h under - 1.0 V reverse bias. This work thereby establishes the buried interface engineering for strain modulation as a generalizable design principle toward efficient and operationally resilient perovskite photovoltaics.

Citations

Discussions

Related