2023/06/14 by Aishani Mazumder, Chung Kim Nguyen, Thiha Aung +18 · 1 voice
Engineering · Materials Science · #Advanced Memory and Neural Computing #CCD and CMOS Imaging Sensors #Transition Metal Oxide Nanomaterials
paper · pdf · doi:10.1002/adfm.202303641
openalex publication_date 2023/06/14 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/29
Abstract Miniaturization and energy consumption by computational systems remain major challenges to address. Optoelectronics based synaptic and light sensing provide an exciting platform for neuromorphic processing and vision applications offering several advantages. It is highly desirable to achieve single‐element image sensors that allow reception of information and execution of in‐memory computing processes while maintaining memory for much longer durations without the need for frequent electrical or optical rehearsals. In this work, ultra‐thin (<3 nm) doped indium oxide (In 2 O 3 ) layers are engineered to demonstrate a monolithic two‐terminal ultraviolet (UV) sensing and processing system with long optical state retention operating at 50 mV. This endows features of several conductance states within the persistent photocurrent window that are harnessed to show learning capabilities and significantly reduce the number of rehearsals. The atomically thin sheets are implemented as a focal plane array (FPA) for UV spectrum based proof‐of‐concept vision system capable of pattern recognition and memorization required for imaging and detection applications. This integrated light sensing and memory system is deployed to illustrate capabilities for real‐time, in‐sensor memorization, and recognition tasks. This study provides an important template to engineer miniaturized and low operating voltage neuromorphic platforms across the light spectrum based on application demand.